FDS6672A Key Features
- 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
- High performance trench technology for extremely low RDS(ON)
- Low gate charge (33 nC typical)
- High power and current handling capability
FDS6672A is N-Channel MOSFET manufactured by Fairchild Semiconductor.
| Part Number | Description |
|---|---|
| FDS6670A | N-Channel MOSFET |
| FDS6670AS | 30V N-Channel MOSFET |
| FDS6670S | N-Channel MOSFET |
| FDS6673AZ | P-Channel MOSFET |
| FDS6673BZ | P-Channel MOSFET |