FDS6672A Datasheet | Fairchild Semiconductor

February 2000 PRELIMINARY 30V N-Channel Power Trench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional switching PWM controllers. It has been optimized for low gate charge, low RDS(ON) and fast switching speed. Features - 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V - High performance trench technology for extremely low RDS(ON) - Low gate charge (33 n C typical) - High power and current handling capability Applications - DC/DC converter 5 6 4 3 2 1 SO-8 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current - Continuous - Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±12 (Note 1a) Units 12.5 50 2.5 1.2 1.0 -55 to +150 Power Dissipation for Single Operation (Note 1a) (Note 1b) (Note 1c) TJ, TSTG Operating and Storage Junction Temperature...