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FDS6672A N-Channel MOSFET

FDS6672A Description

FDS6672A February 2000 PRELIMINARY FDS6672A 30V N-Channel PowerTrench MOSFET General .
This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional sw.

FDS6672A Features

* 12.5 A, 30 V. RDS(ON) = 8 mΩ @ VGS = 10 V RDS(ON) = 9.5 mΩ @ VGS = 4.5 V
* High performance trench technology for extremely low RDS(ON)
* Low gate charge (33 nC typical)

FDS6672A Applications

* DC/DC converter D D D D 5 6 4 3 2 1 SO-8 S S S G 7 8 Absolute Maximum Ratings Symbol VDSS VGSS ID PD Drain-Source Voltage Gate-Source Voltage Drain Current
* Continuous
* Pulsed TA=25 C unless otherwise noted o Parameter Ratings 30 ±12 (Note 1a) Units V V A W

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