FDS6670AS - 30V N-Channel MOSFET

Product Overview

Fairchild Semiconductor

Part number	FDS6670AS
Manufacturer	Fairchild Semiconductor
File Size	227.98 KB
Description	30V N-Channel MOSFET
Datasheet	FDS6670AS Datasheet
Additional preview pages of the FDS6670AS datasheet.

The FDS6670AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies.

This 30V MOSFET is designed to maximize power conversion efficiency, providing a low RDS(ON) and low gate charge.

x 13.5 A, 30 V. RDS(ON) max= 9.0 m: @ VGS = 10 V RDS(ON) max= 11.5 m: @ VGS = 4.5 V x Includes SyncFET Schottky body diode x Low gate charge (27nC typical) x High performance trench technology for extremely low RDS(ON) and fast switching x High power and current handling capability x RoHS Compliant D D D D SO-8 G SS S Absolute Maximum Ratings TA=25oC unless otherwise noted Symbol VDSS VGSS ID PD Parameter Drain-Source Voltage Gate-Source Voltage Drain Current.
Continuous.

📁 Similar Datasheet

Other Datasheets by Fairchild Semiconductor

Published: May 7, 2015 |