FDS6679AZ mosfet equivalent, p-channel powertrench mosfet.
* Max rDS(on) = 9.3mΩ at VGS = -10V, ID = -13A
* Max rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -11A
* Extended VGS range (-25V) for battery applications
* HBM.
common in Notebook Computers and Portable Battery Packs.
March 2009
tm
Features
* Max rDS(on) = 9.3mΩ at VGS = -10.
This P-Channel MOSFET is producted using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.
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