FDS4559 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Q1: N−Channel
* 4.5 A, 60 V RDS(on) = 55 mΩ @ VGS = 10 V RDS(on) = 75 mΩ @ VGS = 4.5 V
* Q2: P−Channel
* −3.5 A, −60 V RDS(on) = 105 mΩ @ VGS =
&nbs.

Application

* DC/DC converter
* Power management
* LCD backlight inverter
* This is a Pb−Free and Halide Free Device.

Description

This complementary MOSFET device is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features
* Q1: N−.

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