* 10 A, 30 V. RDS(ON) = 13.5 mΩ @ VGS = 10 V RDS(ON) = 20 mΩ @ VGS = 4.5 V
* Fast switching speed
* Low gate charge
* High performance trench technology f.

where low in-line power loss and fast switching are required. D D D D SO-8 Pin 1 G S S S 54 63 72 81 Absolute Maxim.

This N-Channel Logic Level MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance. These devices are well s.

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