FDS4435BZ mosfet equivalent, p-channel powertrench mosfet.
* Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
* Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
* Extended VGSS range (-25V) for battery applications
* HBM.
* HBM ESD protection level of ±3.8KV typical (note 3)
* High performance trench technology for extremely low rDS.
This P-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications com.
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