FDS4435 P-Channel MOSFET
•
–8.8 A,
–30 V
RDS(ON) = 20 mΩ @ VGS =
–10 V RDS(ON) = 35 mΩ @ VGS =
–4.5 V
• Low gate charge (17nC typical)
• Fast switching speed
• High perfo.
requiring a wide range of gave drive voltage ratings (4.5V – 25V). Applications • Power management •.
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