FDS4435BZ-F085 Description
This P-Channel MOSFET is produced using ON Semiconductor’s advanced PowerTrench® process that has been especially tailored to minimize the on-state resistance. This device is well suited for Power Management and load switching applications mon in Notebook puters and Portable Battery Packs. September-2017,Rev.1 Publication Order Number:.
FDS4435BZ-F085 Key Features
- Max rDS(on) = 20m: at VGS = -10V, ID = -8.8A
- Max rDS(on) = 35m: at VGS = -4.5V, ID = -6.7A
- Extended VGSS range (-25V) for battery