FDS4141_F085 Datasheet | Fairchild Semiconductor

Features - Typ r DS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A - Typ r DS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A - Typ Qg(TOT) = 35n C at VGS = -10V - High performance trench technology for extremely low r DS(on) - Ro HS pliant - Qualified to AEC Q101 Applications - Control switch in synchronous & non-synchronous buck - Load switch - Inverter SO-8 Pin 1 D5 D6 D7 D8 4G 3S 2S 1S ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A .fairchildsemi. FDS4141_F085 P-Channel Power Trench® MOSFET MOSFET Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter VDSS VGS Drain to Source Voltage Gate to Source Voltage Drain Current Continuous (VGS = 10V) Pulsed EAS Single Pulse Avalanche Energy PD Power Dissipation TJ, TSTG Operating and Storage Temperature Thermal Characteristics RθJC RθJA Thermal Resistance Junction to Case Thermal Resistance Junction to Ambient SO-8, 1in2 copper pad area Ratings -40 ±20 -10.8 -36 229 1.6 -55 to +150 Units V V A m J W o C 30 o C/W 81 o C/W Package Marking and Ordering Information Device Marking Device FDS4141...