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FDS4141_F085 - P-Channel PowerTrench MOSFET

Key Features

  • Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A.
  • Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A.
  • Typ Qg(TOT) = 35nC at VGS = -10V.
  • High performance trench technology for extremely low rDS(on).
  • RoHS Compliant.
  • Qualified to AEC Q101.

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FDS4141_F085 P-Channel PowerTrench® MOSFET FDS4141_F085 P-Channel PowerTrench® MOSFET -40V, -10.8A, 19.0mΩ May 2009 Features „ Typ rDS(on) = 10.5mΩ at VGS = -10V, ID = -10.5A „ Typ rDS(on) = 14.8mΩ at VGS = -4.5V, ID = -8.4A „ Typ Qg(TOT) = 35nC at VGS = -10V „ High performance trench technology for extremely low rDS(on) „ RoHS Compliant „ Qualified to AEC Q101 Applications „ Control switch in synchronous & non-synchronous buck „ Load switch „ Inverter D D D D SO-8 Pin 1 G S S S D5 D6 D7 D8 4G 3S 2S 1S ©2009 Fairchild Semiconductor Corporation FDS4141_F085 Rev. A 1 www.fairchildsemi.