FDN537N datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mW @ VGS = 4.5 V, ID = 6.0 A
* High Performance Trench Technology for Extremely Low rDS(on) .

Description

This N−Channel MOSFET is produced using onsemi advanced POWERTRENCH® process that has been optimized for rDS(on), switching performance and ruggedness. Features
* Max rDS(on) = 23 mW @ VGS = 10 V, ID = 6.5 A
* Max rDS(on) = 36 mW @ VGS = 4.5 .

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