Datasheet Summary
MOSFET
- N-Channel, POWERTRENCH)
20 V, 6.1 A, 28 mW
General Description This N- Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
- Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is RoHS pliant
Applications
- Primary DC- DC Switch
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