FDN028N20 Description
This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.
FDN028N20 Key Features
- Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
- Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
- High Performance Trench Technology for Extremely Low rDS(on)
- High Power and Current Handling Capability in a Widely Used
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb-Free, Halide Free and is RoHS pliant