FDN028N20 Datasheet N-Channel MOSFET

Manufacturer: onsemi

FDN028N20 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	FDN028N20
Manufacturer	onsemi
File Size	337.79 KB
Description	N-Channel MOSFET
Download	FDN028N20 Download (PDF)

General Description

This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance.

Overview

MOSFET – N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20.

Key Features

Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A.
Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

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