FDN028N20 datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
* Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
* High Performance Trench Technology for Extremely Low rDS(o.

Application

* Primary DC−DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parame.

Description

This N−Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on−state resistance and yet maintain low gate charge for superior switching performance. Features
* Max rDS(on.

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