FDN028N20
Description
This N- Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on- state resistance and yet maintain low gate charge for superior switching performance.
Features
- Max r DS(on) = 28 m W at VGS = 4.5 V, ID = 5.2 A
- Max r DS(on) = 45 m W at VGS = 2.5 V, ID = 4.4 A
- High Performance Trench Technology for Extremely Low r DS(on)
- High Power and Current Handling Capability in a Widely Used
Surface Mount Package
- Fast Switching Speed
- 100% UIL Tested
- This Device is Pb- Free, Halide Free and is Ro HS pliant
Applications
- Primary DC- DC Switch
- Load Switch
MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted)
Symbol
Parameter
Ratings Unit
VDS Drain to Source Voltage
VGS Gate to Source Voltage (Note 3)
±12
Continuous
TA = 25°C (Note 1a)
Pulsed
(Note 5)
EAS Single Pulse Avalanche Energy (Note 4) PD Power Dissipation (Note 1a)
(Note 1b)
6 m J
TJ, TSTG...
