Datasheet4U Logo Datasheet4U.com

FDN028N20 N-Channel MOSFET

FDN028N20 Description

MOSFET * N-Channel, POWERTRENCH) 20 V, 6.1 A, 28 mW FDN028N20 General .
This N. Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on.

FDN028N20 Features

* Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A
* Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A
* High Performance Trench Technology for Extremely Low rDS(on)
* High Power and Current Handling Capability in a Widely Used Surface Mount Package
* Fast Switchin

FDN028N20 Applications

* Primary DC
* DC Switch
* Load Switch MOSFET MAXIMUM RATINGS (TC = 25°C, unless otherwise noted) Symbol Parameter Ratings Unit VDS Drain to Source Voltage 20 V VGS Gate to Source Voltage (Note 3) ±12 V ID Continuous TA = 25°C (Note 1a) 6.1 A Pulsed (Note 5) 5

📥 Download Datasheet

Preview of FDN028N20 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN306P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
  • FDN327N - N-Channel MOSFET (Fairchild Semiconductor)
  • FDN335N - N-Channel MOSFET (Fairchild Semiconductor)
  • FDN336P - single P-Channel MOSFET (Fairchild Semiconductor)
  • FDN337N - N-Channel MOSFET (Fairchild Semiconductor)

📌 All Tags

N-Channel MOSFET ON Semiconductor
ON Semiconductor FDN028N20-like datasheet