FDN028N20 - N-Channel MOSFET

Product Overview

ON Semiconductor

Datasheet Details

Part number	FDN028N20
Manufacturer	ON Semiconductor
File Size	337.79 KB
Description	N-Channel MOSFET
Datasheet	FDN028N20 Datasheet
Additional preview pages of the FDN028N20 datasheet.

Product details

Description

This N Channel POWERTRENCH MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize on state resistance and yet maintain low gate charge for superior switching performance.

Features

Max rDS(on) = 28 mW at VGS = 4.5 V, ID = 5.2 A.
Max rDS(on) = 45 mW at VGS = 2.5 V, ID = 4.4 A.
High Performance Trench Technology for Extremely Low rDS(on).
High Power and Current Handling Capability in a Widely Used Surface Mount Package.
Fast Switching Speed.
100% UIL Tested.
This Device is Pb.
Free, Halide Free and is RoHS Compliant.

📁 Similar Datasheet

FDN302P - P-Channel MOSFET (Fairchild Semiconductor)
FDN302P - P-ChanneI MOSFET (UMW)
FDN304P - P-Channel MOSFET (Fairchild Semiconductor)
FDN304P - P-Channel MOSFET (Kexin)
FDN304PZ - P-Channel MOSFET (Fairchild Semiconductor)
FDN306P - P-Channel MOSFET (Fairchild Semiconductor)
FDN308P - P-Channel MOSFET (Fairchild Semiconductor)
FDN327N - N-Channel MOSFET (Fairchild Semiconductor)

Other Datasheets by ON Semiconductor

FDN302P - P-Channel MOSFET
FDN304P - P-Channel MOSFET
FDN304PZ - P-Channel MOSFET
FDN306P - P-Channel MOSFET
FDN308P - P-Channel MOSFET
FDN327N - N-Channel MOSFET

Published: Apr 24, 2024 |