FDN339AN mosfet equivalent, n-channel mosfet.
* 3 A, 20 V
* RDS(on) = 0.035 W @ VGS = 4.5 V
* RDS(on) = 0.050 W @ VGS = 2.5 V
* Low Gate Charge (7 nC Typical)
* High Performance Trench technology .
* DC−DC Converter
* Load Switch
ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted
Symbol
Parameter
V.
This N−Channel 2.5 V specified MOSFET is produced using
onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance.
Features
* 3 .
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