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FDN339AN Datasheet, ON Semiconductor

FDN339AN mosfet equivalent, n-channel mosfet.

FDN339AN Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 264.90KB)

FDN339AN Datasheet
FDN339AN Avg. rating / M : 1.0 rating-14

datasheet Download (Size : 264.90KB)

FDN339AN Datasheet

Features and benefits


* 3 A, 20 V
* RDS(on) = 0.035 W @ VGS = 4.5 V
* RDS(on) = 0.050 W @ VGS = 2.5 V
* Low Gate Charge (7 nC Typical)
* High Performance Trench technology .

Application


* DC−DC Converter
* Load Switch ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise noted Symbol Parameter V.

Description

This N−Channel 2.5 V specified MOSFET is produced using onsemi’s advanced PowerTrench process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. Features
* 3 .

Image gallery

FDN339AN Page 1 FDN339AN Page 2 FDN339AN Page 3

TAGS

FDN339AN
N-Channel
MOSFET
ON Semiconductor

Manufacturer


ON Semiconductor (https://www.onsemi.com/)

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