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FDN342P - P-Channel MOSFET

General Description

This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process.

It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V).

Key Features

  • • • • • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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FDN342P August 1999 FDN342P P-Channel 2.5V Specified PowerTrenchTM MOSFET General Description This P-Channel 2.5V specified MOSFET is produced in a rugged gate version of Fairchild Semiconductor's advanced PowerTrench process. It has been optimized for power management applications for a wide range of gate drive voltages (2.5V - 12V). Features • • • • -2 A, -20 V. RDS(ON) = 0.08 Ω @ VGS = -4.5 V RDS(ON) = 0.13 Ω @ VGS = -2.5 V. Rugged gate rating (±12V). High performance trench technology for extremely low RDS(ON). Enhanced power SuperSOTTM-3 (SOT-23).