* −2 A, 20 V
* RDS(ON) = 70 mW @ VGS = −4.5 V
* RDS(ON) = 110 mW @ VGS = −2.5 V
* Low Gate Charge (7.2 nC Typical)
* High Performance Trench Technolog.

load switching and power management, battery charging circuits, and dc−dc conversion. D G S MARKING DIAGRAM Featur.

This P−Channel Logic Level MOSFET is produced using onsemi advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance and yet maintain low gate charge for superior switching performance. These devices are well .

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