FDN308P mosfet equivalent, p-channel mosfet.
*
–20 V,
–1.5 A RDS(on) = 125 mW @ VGS =
–4.5 V
RDS(on) = 190 mW @ VGS =
–2.5 V
* Fast Switching S.
with a wide range of gate drive voltage (2.5 V
– 12 V).
Features
*
–20 V,
.
This P−Channel 2.5 V specified MOSFET uses a rugged gate
version of onsemi’s advanced POWERTRENCH process. It has been optimized for power management applications with a wide range of gate drive voltage (2.5 V
– 12 V).
Features
* .
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