FDMS86300DC datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* DUAL COOL® Top Side Cooling PQFN package
* Max rDS(on) = 3.1 mW at VGS = 10 V, ID = 24 A
* Max rDS(on) = 4.0 mW at VGS = 8 V, ID = 21 A
* High performan.

Application

* Synchronous Rectifier for DC/DC Converters
* Telecom Secondary Side Rectification
* High End Server/Workst.

Description

This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH® process that incorporates Shielded Gate technology. Advancements in both silicon and DUAL COOL® package technologies have been combined to offer the lowest rDS(on) while maintaini.

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