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MOSFET – N-Channel, POWERTRENCH®
80 V, 130 A, 2.4 mW
FDMS86350
Description This N−Channel MOSFET is produced using onsemi advanced
POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
• Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A • Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A • Advanced Package and Silicon Combination for Low RDS(on) and
High Efficiency
• MSL1 Robust Package Design • 100% UIL Tested • RoHS Compliant • These Device is Halogen Free
Applications
• Primary MOSFET • Synchronous Rectifier • Load Switch • Motor Control Switch
DATA SHEET www.onsemi.com
Pin 1
Pin 1 SSS G
DDD D
Top
Bottom
PQFN8 5X6, 1.
FDMS86350 Datasheet
