FDMS86350 mosfet equivalent, n-channel mosfet.
* Max RDS(on) = 2.4 mW at VGS = 10 V, ID = 25 A
* Max RDS(on) = 3.2 mW at VGS = 8 V, ID = 22 A
* Advanced Package and Silicon Combination for Low RDS(on) and
.
* Primary MOSFET
* Synchronous Rectifier
* Load Switch
* Motor Control Switch
DATA SHEET www.onsemi.com.
This N−Channel MOSFET is produced using onsemi advanced
POWERTRENCH® process that has been especially tailored to minimize the on−state resistance and yet maintain superior switching performance.
Features
* Max RDS(on) = 2.4 mW at VGS = 10 V, ID .
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