FDMS86310 datasheet, mosfet equivalent, Fairchild Semiconductor

Features and benefits

* Max rDS(on) = 4.8 mΩ at VGS = 10 V, ID = 17 A
* Max rDS(on) = 6.7 mΩ at VGS = 8 V, ID = 14 A
* Advanced Package and Silicon combination for low rDS(on) and .

Application

* Primary Switch
* Synchronous Rectifier
* Motor Switch Top Pin 1 Bottom Pin 1 S S D S S G S D S.

Description

This N-Channel MOSFET has been designed specifically to improve the overall efficiency and to minimize switch node ringing of DC/DC converters using either synchronous or conventional switching PWM controllers.It has been optimized for low gate charg.

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