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FDMS86350ET80 - MOSFET

General Description

Extended TJ rating to 175°C Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A Advanced Package and Silicon combination for low rDS(on) and high efficiency MSL1 robust package design 100% UIL tested

Key Features

  • General.

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FDMS86350ET80 N-Channel PowerTrench® MOSFET January 2015 FDMS86350ET80 N-Channel PowerTrench® MOSFET 80 V, 198 A, 2.4 mΩ Features General Description „ Extended TJ rating to 175°C „ Max rDS(on) = 2.4 mΩ at VGS = 10 V, ID = 25 A „ Max rDS(on) = 3.2 mΩ at VGS = 8 V, ID = 22 A „ Advanced Package and Silicon combination for low rDS(on) and high efficiency „ MSL1 robust package design „ 100% UIL tested „ RoHS Compliant This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance.