FDMD8900 mosfet equivalent, n-channel power mosfet.
Q1: N−Channel
* Max rDS(on) = 4 mW at VGS = 10 V, ID = 19 A
* Max rDS(on) = 5 mW at VGS = 4.5 V, ID = 17 A
* Max rDS(on) = 6.5 mW at VGS = 3.8 V, ID = 15 A
* Computing
* Buck, Boost and Buck/Boost Applications
* General Purpose POL
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D1 1 D1 2 D1 3 .
This devices utilizes two optimized N−ch FETs in a dual 3.3 x 5 mm
thermally enhanced power package. The HS Source and LS drain are internally connected providing a low source inductance package, helping to provide the best FOM.
Features
Q1: N−Channe.
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