FDMD8430 mosfet equivalent, dual n-channel power mosfet.
* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
* Ideal for Flexible Layout in Secondary Side Synchronous
R.
* Isolated DC−DC Synchronous Rectifiers
* Common Ground Load Switches
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Pin 1
D2 D2
D2
G2
B.
This package integrates two N−Channel devices connected
internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm.
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