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FDMD8430 Datasheet, ON Semiconductor

FDMD8430 mosfet equivalent, dual n-channel power mosfet.

FDMD8430 Avg. rating / M : 1.0 rating-13

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FDMD8430 Datasheet

Features and benefits


* Max rDS(on) = 2.12 mW at VGS = 10 V, ID = 28 A
* Max rDS(on) = 2.95 mW at VGS = 4.5 V, ID = 24 A
* Ideal for Flexible Layout in Secondary Side Synchronous R.

Application


* Isolated DC−DC Synchronous Rectifiers
* Common Ground Load Switches www.onsemi.com Top Pin 1 D2 D2 D2 G2 B.

Description

This package integrates two N−Channel devices connected internally in common−source configuration. This enables very low package parasitics and optimized thermal path to the common source pad on the bottom. Provides a very small footprint (3.3 x 5 mm.

Image gallery

FDMD8430 Page 1 FDMD8430 Page 2 FDMD8430 Page 3

TAGS

FDMD8430
Dual
N-Channel
Power
MOSFET
ON Semiconductor

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