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FDMD82100 Datasheet, ON Semiconductor

FDMD82100 mosfet equivalent, dual n-channel mosfet.

FDMD82100 Avg. rating / M : 1.0 rating-12

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FDMD82100 Datasheet

Features and benefits


* Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.5 A
* Ideal for Flexible Layout in Primary Side of Bridge Topology

Application


* Synchronous Buck : Primary Switch of Half / Full bridge converter for telecom
* Motor Bridge: Primary Switch o.

Description

This device includes two 100 V N−Channel MOSFETs in a dual Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon. Features
* Max rDS(on) = 19 mW .

Image gallery

FDMD82100 Page 1 FDMD82100 Page 2 FDMD82100 Page 3

TAGS

FDMD82100
Dual
N-Channel
MOSFET
FDMD82100L
FDMD8280
FDMD84100
ON Semiconductor

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