FDMD82100 mosfet equivalent, dual n-channel mosfet.
* Max rDS(on) = 19 mW at VGS = 10 V, ID = 7 A
* Max rDS(on) = 33 mW at VGS = 6 V, ID = 5.5 A
* Ideal for Flexible Layout in Primary Side of Bridge Topology
* Synchronous Buck : Primary Switch of Half / Full bridge converter
for telecom
* Motor Bridge: Primary Switch o.
This device includes two 100 V N−Channel MOSFETs in a dual
Power (3.3 mm X 5 mm) package. HS source and LS Drain internally connected for half/full bridge, low source inductance package, low rDS(on)/Qg FOM silicon.
Features
* Max rDS(on) = 19 mW .
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