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FDMC7696 - N-Channel MOSFET

Description

This N Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on

state resistance.

Features

  • Max rDS(on) = 11.5 mW at VGS = 10 V, ID = 12 A.
  • Max rDS(on) = 14.5 mW at VGS = 4.5 V, ID = 10 A.
  • High Performance Technology for Extremely Low rDS(on).
  • This Device is Pb.
  • Free, Halide Free and RoHS Compliant.

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Datasheet Details

Part number FDMC7696
Manufacturer onsemi
File Size 417.84 KB
Description N-Channel MOSFET
Datasheet download datasheet FDMC7696 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFET – N-Channel, POWERTRENCH) 30 V, 12 A, 11.5 mW FDMC7696 General Description This N−Channel MOSFET is produced using onsemi’s advanced POWERTRENCH process that has been especially tailored to minimize the on−state resistance. This device is well suited for Power Management and load switching applications common in Notebook Computers and Portable Battery Packs. Features • Max rDS(on) = 11.5 mW at VGS = 10 V, ID = 12 A • Max rDS(on) = 14.5 mW at VGS = 4.5 V, ID = 10 A • High Performance Technology for Extremely Low rDS(on) • This Device is Pb−Free, Halide Free and RoHS Compliant Applications • DC/DC Buck Converters • Notebook Battery Power Management • Load Switch in Notebook DATA SHEET www.onsemi.com VDS 30 V rDS(on) MAX 11.5 mW @ 10 V 14.5 mW @ 4.
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