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FDG6322C Datasheet, ON Semiconductor

FDG6322C fet equivalent, dual n & p channel digital fet.

FDG6322C Avg. rating / M : 1.0 rating-12

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FDG6322C Datasheet

Features and benefits

N-Ch 0.22 A, 25 V, RDS(ON) = 4.0 Ω @ VGS= 4.5 V, RDS(ON) = 5.0 Ω @ VGS= 2.7 V. P-Ch -0.41 A,-25V, RDS(ON) = 1.1 Ω @ VGS= -4.5V, RDS(ON) = 1.5 Ω @ VGS= -2.7V. Very small p.

Application

as a replacement for bipolar digital transistors and small signal MOSFETs. Since bias resistors are not required, this d.

Description

These dual N & P-Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density, DMOS technology. This very high density process is especially tailored to minimizeon-state resistance.

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TAGS

FDG6322C
Dual
Channel
Digital
FET
FDG6320C
FDG6321C
FDG6323L
ON Semiconductor

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