FDG6320C datasheet, fet equivalent, ON Semiconductor

Features and benefits

* N−Ch 0.22 A, 0.25 V
* RDS(ON) = 4.0 W @ VGS = 4.5 V
* RDS(ON) = 5.0 W @ VGS = 2.7 V
* P−Ch −0.14 A, −25 V
* RDS(ON) = 10 W @ VGS = −4.5 V
* RDS(.

Application

as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this d.

Description

These dual N & P−Channel logic level enhancement mode field effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on−state resistanc.

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