FDG6320C fet equivalent, dual-channel digital fet.
* N−Ch 0.22 A, 0.25 V
* RDS(ON) = 4.0 W @ VGS = 4.5 V
* RDS(ON) = 5.0 W @ VGS = 2.7 V
* P−Ch −0.14 A, −25 V
* RDS(ON) = 10 W @ VGS = −4.5 V
* RDS(.
as a replacement for bipolar digital transistors and small signal MOSFETS. Since bias resistors are not required, this d.
These dual N & P−Channel logic level enhancement mode field
effect transistors are produced using ON Semiconductor’s proprietary, high cell density, DMOS technology, this very high density process is especially tailored to minimize on−state resistanc.
Image gallery
TAGS