FDD6N50 Datasheet | onsemi

Features - RDS(on) = 900 mΩ (Max.) @ VGS = 10 V, ID = 3 A - Low Gate Charge (Typ. 12.8 n C) - Low Crss (Typ. 9 p F) - 100% Avalanche Tested - Improved dv/dt Capability Applications - LCD/LED/PDP TV - Lighting - Uninterruptible Power Supply - AC-DC Power Supply Description Uni FETTM MOSFET is ON Semiconductor’s high voltage MOSFET family based on planar stripe and DMOS technology. This MOSFET is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. This device family is suitable for switching power converter applications such as power factor correction (PFC), flat panel display (FPD) TV power, ATX and electronic lamp ballasts. D-PAK I-PAK Absolute Maximum Ratings TC = 25o C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current Drain Current - Continuous (TC = 25°C) - Continuous (TC = 100°C) - Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avalanche Energy (Note 1) Peak Diode Recovery dv/dt (Note 3) Power Dissipation (TC =...