FCPF600N60Z datasheet, mosfet equivalent, ON Semiconductor

Features and benefits

* 650 V @ TJ = 150C
* Typ. RDS(on) = 510 mW
* Ultra Low Gate Charge (Typ. Qg = 20 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 74 pF)
* .

Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features
* 650 V @ TJ .

Description

SUPERFET II MOSFET is onsemi’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This technology is tailored to minimize conductio.

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