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FCPF190N65S3L1 - Power MOSFET

Description

SUPERFET III MOSFET is ON Semiconductor’s brand new high voltage super junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on

resistance and lower gate charge performance.

Features

  • 700 V @ TJ = 150°C.
  • Typ. RDS(on) = 165 mW.
  • Ultra Low Gate Charge (Typ. Qg = 30 nC).
  • Low Effective Output Capacitance (Typ. Coss(eff. ) = 277 pF).
  • 100% Avalanche Tested.
  • These Devices are Pb.
  • Free and are RoHS Compliant.

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Datasheet Details

Part number FCPF190N65S3L1
Manufacturer Onsemi
File Size 286.66 KB
Description Power MOSFET
Datasheet download datasheet FCPF190N65S3L1 Datasheet
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FCPF190N65S3L1 Power MOSFET, N-Channel, SUPERFET) III, Easy Drive, 650 V, 14 A, 190 mW Description SUPERFET III MOSFET is ON Semiconductor’s brand−new high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low on−resistance and lower gate charge performance. This advanced technology is tailored to minimize conduction loss, provides superior switching performance, and withstand extreme dv/dt rate. Consequently, SUPERFET III MOSFET Easy drive series helps manage EMI issues and allows for easier design implementation. Features • 700 V @ TJ = 150°C • Typ. RDS(on) = 165 mW • Ultra Low Gate Charge (Typ. Qg = 30 nC) • Low Effective Output Capacitance (Typ. Coss(eff.
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