FCH47N60N mosfet equivalent, n-channel mosfet.
* 650 V @ TJ = 150°C
* RDS(on) = 51.5 mW (Typ.) @ VGS = 10 V, ID = 23.5 A
* Ultra Low Gate Charge (Typ. Qg = 115 nC)
* Low Effective Output Capacitance (T.
such as PFC, server/telecom power, FPD TV power, ATX power, and industrial power applications.
Features
* 650 V @ TJ.
The SUPREMOS MOSFET is ON Semiconductor’s next
generation of high voltage super−junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process con.
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