FCH47N60 datasheet, mosfet equivalent, ON Semiconductor

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Features and benefits

* Typ. RDS(on) = 58 mW
* 650 V @ TJ = 150°C
* Ultra Low Gate Charge (Typ. Qg = 210 nC)
* Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
*.

Application

such as PFC, server/telecom power, FPD TV power, ATX power and industrial power applications. Features
* Typ. RDS(on.

Description

SuperFET II MOSFET is ON Semiconductor’s first generation of high voltage super−junction (SJ) MOSFET family that is utilizing charge balance technology for outstanding low onresistance and lower gate charge performance. This technology is tailored to.

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