FCH47N60NF
Description
The SUPREMOS® MOSFET is ON Semiconductor’s next generation of high voltage super-junction (SJ) technology employing a deep trench filling process that differentiates it from the conventional SJ MOSFETs. This advanced technology and precise process control provides lowest Rsp on-resistance, superior switching performance and ruggedness.
Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 57.5 mW
- Ultra Low Gate Charge (Typ. Qg = 240 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS compliant
