FCH47N60NF Key Features
- 650 V @ TJ = 150°C
- Typ. RDS(on) = 57.5 mW
- Ultra Low Gate Charge (Typ. Qg = 240 nC)
- Low Effective Output Capacitance (Typ. Coss(eff.) = 420 pF)
- 100% Avalanche Tested
- This Device is Pb-Free and is RoHS pliant
| Manufacturer | Part Number | Description |
|---|---|---|
| FCH47N60NF | MOSFET | |
| FCH47N60N | N-Channel MOSFET | |
| FCH47N60 | N-Channel MOSFET | |
| FCH47N60F | 600V N-Channel MOSFET |