FCH47N60N mosfet equivalent, n-channel mosfet.
* 650V @TJ = 150 C
* RDS(on) = 51.5mΩ ( Typ.)@ VGS = 10V, ID =23.5 A
* Ultra Low Gate Charge ( Typ.Qg =115nC)
* Low Effective Output Capacitance
* 100.
D
G G D S
TO-247
S
MOSFET Maximum Ratings TC = 25oC unless otherwise noted
Symbol VDSS VGSS ID IDM EAS IAR EAR dv/d.
The SupreMOS MOSFET, Fairchild’s next generation of high voltage super-junction MOSFETs, employs a deep trench filling process that differentiates it from preceding multi-epi based technologies. By utilizing this advanced technology and precise proce.
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