| Description | These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current ap... |
| Features |
• High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • These are Pb−Free Devices DATA SHEET www.onsemi.com BS170 DGS TO−92 3 4.825x4.76 CASE 135AN D GS TO−92 3 4.83x4.76 LEADFORMED CASE 135AR MMBF170 D G S SOT−23 CASE 318−08 Drain Gate Source MARKING DIAGR... |
| Datasheet |
 BS170 Datasheet - 880.96KB |
