BS170 - N-channel MOSFET

onsemi

General Description

These N

produced using onsemi’s proprietary, high cell density, DMOS technology.

state resistance while provide rugged, reliable, and fast switching performance.

Key Features

High Density Cell Design for Low RDS(ON).
Voltage Controlled Small Signal Switch.
Rugged and Reliable.
High Saturation Current Capability.
These are Pb.
Free Devices DATA SHEET www. onsemi. com BS170 DGS TO.
92 3 4.825x4.76 CASE 135AN D GS TO.
92 3 4.83x4.76.

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BS170 n-channel mosfet by onsemi - Datasheet Preview

Datasheet Details

Part number	BS170
Manufacturer	onsemi
File Size	880.96 KB
Description	N-channel MOSFET
Datasheet	BS170 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Field Effect Transistor N-Channel, Enhancement Mode BS170, MMBF170 General Description These N−Channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products have been designed to minimize on−state resistance while provide rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 500 mA DC. These products are particularly suited for low voltage, low current applications such as small servo motor control, power MOSFET gate drivers, and other switching applications. Features • High Density Cell Design for Low RDS(ON) • Voltage Controlled Small Signal Switch • Rugged and Reliable • High Saturation Current Capability • These are Pb−Free Devices DATA SHEET www.onsemi.