Datasheet Details
| Part number | BS170 |
|---|---|
| Manufacturer | Fairchild (now onsemi) |
| File Size | 1.25 MB |
| Description | N-channel MOSFET |
| Datasheet |
 BS170 Datasheet
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General Description
These N-Channel enhancement mode field effect transistors are produced using Fairchild's proprietary, high cell density, DMOS technology.
These products have been designed to minimize on-state resistance while provide rugged, reliable, and fast switching performance.
Key Features
- High density cell design for low RDS(ON).
- Voltage controlled small signal switch.
- Rugged and reliable.
- High saturation current capability. BS170 MMBF170 D D GS TO-92 S SOT-23 G Absolute Maximum Ratings TA = 25°C unless otherwise noted Symbol Parameter BS170 MMBF170 VDSS VDGR VGSS ID Drain-Source Voltage Drain-Gate Voltage (RGS ≤ 1MΩ) Gate-Source Voltage Drain Current - Continuous - Pulsed 500 1200 60 60 ± 20 500 800 TJ, TSTG TL Operating and Storage Temp.
