2N7000BU Overview
These N−channel enhancement mode field effect transistors are produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugged, reliable, and fast switching performance. They can be used in most applications requiring up to 400 mA DC and can deliver pulsed currents up to 2.
2N7000BU Key Features
- Fast Switching Times
- Improved Inductive Ruggedness
- Lower Input Capacitance
- Extended Safe Operating Area
- Improved High-Temperature Reliability
- This is a Pb-Free Device
