2N7000BU mosfet equivalent, advanced small-signal mosfet.
* Fast Switching Times
* Improved Inductive Ruggedness
* Lower Input Capacitance
* Extended Safe Operating Area
* Improved High−Temperature Reliabilit.
requiring up to 400 mA DC and can deliver pulsed currents up to 2 A. These products are particularly suited for low−volt.
These N−channel enhancement mode field effect transistors are
produced using onsemi’s proprietary, high cell density, DMOS technology. These products minimize on−state resistance while providing rugged, reliable, and fast switching performance. They .
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