PMZ1000UN fet equivalent, n-channel trenchmos standard level fet.
* Fast switching
* Low conduction losses due to low on-state resistance
* Saves PCB space due to small footprint (90 % smaller than SOT23)
* Suitable for .
only.
1.2 Features and benefits
* Fast switching
* Low conduction losses due to low on-state resistance
* S.
Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only.
1.2 Feat.
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