PMZ1000UN Datasheet | NXP Semiconductors

N-channel Trench MOS standard level FET Rev. 2 - 17 September 2010 BOTTOM VIEW Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using Trench MOS technology. This product is designed and qualified for use in puting, munications, consumer and industrial applications only. 1.2 Features and benefits - Fast switching - Low conduction losses due to low on-state resistance - Saves PCB space due to small footprint (90 % smaller than SOT23) - Suitable for use in pact designs due to low profile (55 % lower than SOT23) 1.3 Applications - Driver circuits - Switching in portable appliances 1.4 Quick reference data Table 1. Symbol VDS ID Ptot RDSon Quick reference data Parameter drain-source voltage drain current total power dissipation drain-source on-state resistance Conditions 25 °C ≤ Tj ≤ 150 °C Tamb = 25 °C; VGS = 10 V; see Figure 1 Tamb = 25 °C; see Figure 2 VGS = 4.5 V; ID = 0.2 A; Tj = 25 °C; see Figure 8 Min Typ Max 30 480 350 1 Unit V m A m W Ω Static characteristics NXP Semiconductors N-channel Trench MOS standard level FET 2. Pinning information Table 2. Pin 1 2 3 Pinning Symbol G S D Description gate source drain 1 3 2 Transparent top view G mbb076 Simplified outline Graphic symbol SOT883 (SC-101) 3. Ordering information Table 3. Ordering information Package Name PMZ1000UN SC-101 Description Version leadless ultra small plastic package; 3 solder lands; body 1.0 × 0.6 × 0.5 mm SOT883 Type...