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BUK9Y19-55B Datasheet, NXP Semiconductors

BUK9Y19-55B fet equivalent, n-channel trenchmos logic level fet.

BUK9Y19-55B Avg. rating / M : 1.0 rating-11

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BUK9Y19-55B Datasheet

Features and benefits

s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible. 1.3 Applications s Automotive systems s Motors, lamps and solenoids s 12 V and 2.

Application

s Automotive systems s Motors, lamps and solenoids s 12 V and 24 V loads s General purpose power switching. 1.4 Quick r.

Description

N-channel enhancement mode field-effect power transistor in a plastic package using Philips High-Performance Automotive (HPA) TrenchMOS™ technology. 1.2 Features s Very low on-state resistance s 175 °C rated s Q101 compliant s Logic level compatible..

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BUK9Y19-55B Page 1 BUK9Y19-55B Page 2 BUK9Y19-55B Page 3

TAGS

BUK9Y19-55B
N-channel
TrenchMOS
logic
level
FET
BUK9Y19-100E
BUK9Y19-75B
BUK9Y104-100B
NXP Semiconductors

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