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BUK9Y104-100B Datasheet, NXP Semiconductors

BUK9Y104-100B fet equivalent, n-channel trenchmos logic level fet.

BUK9Y104-100B Avg. rating / M : 1.0 rating-11

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BUK9Y104-100B Datasheet

Features and benefits


* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitable for logic level gate drive sources
* Suitable for thermally demanding e.

Application

1.2 Features and benefits
* Low conduction losses due to low on-state resistance
* Q101 compliant
* Suitab.

Description

Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Featu.

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BUK9Y104-100B Page 1 BUK9Y104-100B Page 2 BUK9Y104-100B Page 3

TAGS

BUK9Y104-100B
N-channel
TrenchMOS
logic
level
FET
BUK9Y107-80E
BUK9Y11-30B
BUK9Y11-80E
NXP Semiconductors

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