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BUK9Y19-55B - N-channel MOSFET

General Description

Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology.

This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications.

Key Features

  • 175 °C rated.
  • Q101 compliant.
  • Logic level compatible.
  • Very low on-state resistance 1.3.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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BUK9Y19-55B N-channel TrenchMOS logic level FET Rev. 03 — 29 February 2008 Product data sheet 1. Product profile 1.1 General description Logic level N-channel enhancement mode power Field-Effect Transistor (FET) in a plastic package using Nexperia High-Performance Automotive (HPA) TrenchMOS technology. This product has been designed and qualified to the appropriate AEC standard for use in automotive critical applications. 1.2 Features „ 175 °C rated „ Q101 compliant „ Logic level compatible „ Very low on-state resistance 1.3 Applications „ 12 V and 24 V loads „ General purpose power switching „ Automotive systems „ Motors, lamps and solenoids 1.4 Quick reference data Table 1.