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BUK9Y19-100E - N-channel MOSFET

Description

Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.

This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.

2.

12 V, 24 V and 48 V Automotive systems Motors, lamps

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Datasheet Details

Part number BUK9Y19-100E
Manufacturer nexperia
File Size 741.72 KB
Description N-channel MOSFET
Datasheet download datasheet BUK9Y19-100E Datasheet
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Full PDF Text Transcription

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BUK9Y19-100E N-channel 100 V, 19 mΩ logic level MOSFET in LFPAK56 7 November 2016 Product data sheet 1. General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology. This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications. 2. Applications • 12 V, 24 V and 48 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 3. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig. 2 Ptot total power dissipation Tmb = 25 °C; Fig.
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