logo

BLS6G2933S-130 Datasheet, NXP Semiconductors

BLS6G2933S-130 transistor equivalent, ldmos s-band radar power transistor.

BLS6G2933S-130 Avg. rating / M : 1.0 rating-12

datasheet Download (Size : 116.11KB)

BLS6G2933S-130 Datasheet

Features and benefits

I Typical pulsed RF performance at a frequency of 2.9 GHz to 3.3 GHz, a supply voltage of 32 V, an IDq of 100 mA, a tp of 300 µs with δ of 10 %: N Output power = 130 W N .

Application

in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = .

Description

130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance Typical RF performance at Tcase = 25 °C; tp = 300 µs; δ = 10 %; IDq = 100 mA; in a class-AB production test circuit. Mode of op.

Image gallery

BLS6G2933S-130 Page 1 BLS6G2933S-130 Page 2 BLS6G2933S-130 Page 3

TAGS

BLS6G2933S-130
LDMOS
S-band
radar
power
transistor
NXP Semiconductors

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts