BLF6G22S-45 - Power LDMOS transistor

NXP Semiconductors

BLF6G22S-45 Datasheet Preview — Preview of BLF6G22S-45 PDF

Datasheet Details

Part number	BLF6G22S-45
Manufacturer	NXP ↗ Semiconductors
File Size	95.73 KB
Description	Power LDMOS transistor
Datasheet	BLF6G22S-45_NXPSemiconductors.pdf

BLF6G22S-45 Product details

Description

45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 48[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.CAUTION This device is

Features

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 405 mA: N Average output power = 2.5 W N Power gain = 18.5 dB (typ) N Efﬁciency = 13 % N ACPR =.
48 dBc I Easy power control I Integrated ESD protection I Excellent ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use I Compliant to Directive 2002/95/EC, regarding Restrict.

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Published: Jun 18, 2010 |