Datasheet Summary
Power LDMOS transistor
Rev. 02
- 17 April 2008
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Product data sheet
1. Product profile
1.1 General description
45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz.
Table 1. Typical performance RF performance at Tcase = 25 °C in a mon source class-AB production test circuit. Mode of operation 2-carrier W-CDMA
[1] f (MHz) 2110 to 2170
VDS (V) 28
PL(AV) (W) 2.5
Gp (dB) 18.5
ηD (%) 13
ACPR (dBc)
- 48[1]
Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7.5 dB at 0.01 % probability on CCDF per carrier; carrier spacing 5 MHz.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD). Therefore care...