BLF6G22LS-100 - Power LDMOS transistor

NXP Semiconductors

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Datasheet Details

Part number	BLF6G22LS-100
Manufacturer	NXP Semiconductors
File Size	160.20 KB
Description	Power LDMOS transistor
Datasheet	BLF6G22LS-100_NXPSemiconductors.pdf

BLF6G22LS-100 Product details

Description

100 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 37[1] ACPR (dBc) 41[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MH

Features

Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 28 V and an IDq of 950 mA: Average output power = 25 W Gain = 18.2 dB Efficiency = 29 % IMD3 =.
37 dBc ACPR =.
41 dBc.
Easy power control.
Integrated ESD protection.
Excellent ruggedness.
High efficiency.
Excellent thermal stability.
Designed for broadband operation (2000 MHz to 2200 MHz).
Internally m.

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Published: Jun 18, 2010 |