BLF6G22LS-180RN, BLF6G22-180RN - Power LDMOS Transistor

NXP

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BLF6G22LS-180RN Datasheet Preview — This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN. Please refer to the document for exact specifications by model.

Datasheet Details

Part number	BLF6G22LS-180RN, BLF6G22-180RN
Manufacturer	NXP
File Size	135.96 KB
Description	Power LDMOS Transistor
Datasheet	BLF6G22-180RN_PhilipsSemiconductors.pdf
Note	This datasheet PDF includes multiple part numbers: BLF6G22LS-180RN, BLF6G22-180RN. Please refer to the document for exact specifications by model.

BLF6G22LS-180RN Product details

Description

180 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. 38[1] ACPR (dBc) 42[1] Test signal: 3GPP; test model 1; 64 DPCH; PAR = 7 dB at 0.01 % probability on CCDF per carrier; carrier spacing 10 MHz.CA

Features

I Typical 2-carrier W-CDMA performance at frequencies of 2110 MHz and 2170 MHz, a supply voltage of 30 V and an IDq of 1400 mA: N Average output power = 40 W N Power gain = 16.0 dB N Efﬁciency = 25 % N IMD3 =.
38 dBc N ACPR =.
42 dBc I Easy power control I Integrated ESD protection I Enhanced ruggedness I High efﬁciency I Excellent thermal stability I Designed for broadband operation (2000 MHz to 2200 MHz) I Internally matched for ease of use NXP Semiconductors www. DataSheet4U. c.

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Published: Jul 29, 2009 |