BFU730F Datasheet | NXP Semiconductors

description NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package. CAUTION This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards. 1.2 Features and benefits - - - - Low noise high gain microwave transistor Noise figure (NF) = 0.8 d B at 5.8 GHz High maximum power gain 18.5 d B at 5.8 GHz 110 GHz f T silicon germanium technology 1.3 Applications - - - - - - - - - - - - - - - 2nd LNA stage and mixer stage in DBS LNB’s Low noise amplifiers for microwave munications systems Ka band oscillators DRO’s Low current battery equipped applications Microwave driver / buffer applications Wi-Fi / WLAN / Wi MAX GPS RKE AMR Zig Bee LTE, cellular, UMTS SDARS first stage LNA FM radio Mobile TV Bluetooth ..net NXP Semiconductors NPN wideband silicon germanium RF transistor 1.4 Quick reference data Table 1. VCBO VCEO VEBO IC Ptot h FE CCBS f T Gp(max) NF PL(1d B) Quick reference data Conditions open emitter open base open collector Tsp ≤ 90 °C IC = 2 m A; VCE = 2 V; Tj = 25 °C VCB = 2 V; f = 1 MHz IC = 25 m A; VCE = 2 V; f = 2 GHz; Tamb = 25 °C IC = 17 m A; VCE = 2 V; f = 12 GHz; Tamb = 25 °C IC = 5 m A; VCE = 2 V; f = 12 GHz; ΓS = Γopt IC = 15 m A; VCE = 2.5 V; ZS = ZL = 50 Ω; f = 5.8 GHz; Tamb = 25 °C [2] [1] Symbol Parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current total power dissipation DC current gain collector-base capacitance transition frequency maximum power gain noise figure output power at 1 d B gain pression Min 205 - Typ 5 380 55 55 12.5 1.30 12.5 Max 10 2.8 1.0 30 197 555 - Unit V V V m A m W f F GHz d B d B d Bm [1] [2] Tsp is the temperature at the solder point of the emitter lead. Gp(max) is the maximum power gain, if K > 1. If K < 1 then Gp(max) = Maximum Stable Gain...