BFU768F
description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to Electro Static Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
- Low noise high linearity RF transistor
- 110 GHz f T silicon germanium technology
- Optimal linearity for low current and high gain
- Low minimum noise figure of 0.50 d B at 2.4 GHz and 0.74 d B at 5.8 GHz
- Low ponent count Wi-Fi LNA application circuits available for 2.4 GHz ISM band and 4.9 GHz to 5.9 GHz U-NII band, with optimized RF performance:
- Low current: 10.8 m A
- Noise figure < 1.2 d B
- Gain: 13.1 d B at 2.4 GHz, 12.2 d B at 5 GHz
- High IP3: 15.7 d Bm at 2.4 GHz, 18.8 d Bm at 5 GHz
- Very fast on/off times
- Unconditionally stable
- Higher IP3, higher gain or lower noise figure...
