BFU760F Datasheet (NXP Semiconductors) - wideband silicon germanium RF transistor

BFU760F, wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in t

BFU760F Features

* Low noise high linearity RF transistor

* High maximum output third-order intercept point 32 dBm at 1.8 GHz

* 110 GHz fT silicon germanium technology 1.3 Applications

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