BFU660F Datasheet (NXP Semiconductors) - NPN wideband silicon RF transistor

BFU660F, NPN wideband silicon RF transistor

NPN silicon microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in the ANSI/ESD S20.20

BFU660F Features

* Low noise high linearity RF transistor

* High output third-order intercept point 27 dBm at 1.8 GHz

* 40 GHz fT silicon technology 1.3 Applications

* Analog/digital cordless applications

* X-band high output buffer amplifier

* ZigBee

* SDARS s