Datasheet Details
| Part number | BFU730F |
|---|---|
| Manufacturer | NXP Semiconductors |
| File Size | 154.24 KB |
| Description | wideband silicon germanium RF transistor |
| Datasheet |
 BFU730F Datasheet
|
|
|
Description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
CAUTION This device is sensitive to ElectroStatic Discharge (ESD).
Observe precautions for handling electrostatic sensitive devices.
Features
- Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3.