BFU730F Datasheet (NXP Semiconductors) - wideband silicon germanium RF transistor

BFU730F, wideband silicon germanium RF transistor

NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.

CAUTION This device is sensitive to ElectroStatic Discharge (ESD).

Observe precautions for handling electrostatic sensitive devices.

Such precautions are described in t

BFU730F Features

* Low noise high gain microwave transistor Noise figure (NF) = 0.8 dB at 5.8 GHz High maximum power gain 18.5 dB at 5.8 GHz 110 GHz fT silicon germanium technology 1.3 Applications