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BFU768F
NPN wideband silicon germanium RF transistor
Rev. 1.2 — 24 December 2012
Product data sheet
1. Product profile
CAUTION
1.1 General description
NPN silicon germanium microwave transistor for high speed, low noise applications in a plastic, 4-pin dual-emitter SOT343F package.
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling electrostatic sensitive devices. Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or equivalent standards.
1.2 Features and benefits
Low noise high linearity RF transistor 110 GHz fT silicon germanium technology Optimal linearity for low current and high gain Low minimum noise figure of 0.50 dB at 2.4 GHz and 0.74 dB at 5.
BFU768F Datasheet
